sot-23 plastic-encapsulate mosfets CJ2312 n-channel 20-v(d-s) mosfet applications z dc/dc converters z load switching for portable applications m arking : s12 maximum ratings (t a =25 unless otherwise noted) parameter symbol value unit drain-source voltage v ds 20 gate-source voltage v gs 8.0 v continuous drain current t=5s i d 5 pulsed drain current i dm 20 continuous source-drain diode current i s 1.04 a maximum power dissipation t=5s p d 0. 3 5 w thermal resistance from junction to ambient r ja 357 /w junction temperature t j 150 storage temperature t stg -50 ~+150 so t -23 1. gate 2. source 3. drain 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
electrical characteristics (t a =25 unless otherwise noted) parameter symbol test condition min typ max unit static drain-source breakdown voltage v (br) dss v gs = 0v, i d =250a 20 v gate-source leakage i gss v ds =0v, v gs =8v 100 na zero gate voltage drain current i dss v ds =20v, v gs =0v 1.0 a gate-source thre shold voltage v gs(th) v ds =v gs , i d =250a 0.45 1.0 v v gs =4.5v, i d =5.0a 0.0318 v gs =2.5v, i d =4.7a 0.0356 drain-source on-state resistance a r ds(on) v gs =1.8v, i d =4.3a 0.0414 ? forward tranconductance a g fs v ds =10v, i d =5.0a 6 s dynamic b input capacitance c iss 865 output capacitance c oss 105 reverse transfer capacitance c rss v ds =10v,v gs =0v,f =1mhz 55 pf gate resistance r g f =1mhz 0.5 4.8 ? turn-on delay time t d(on) 10 rise time t r 20 turn-off delay time t d(off) 32 fall yime t f v gen =5v,v dd =10v, i d =4a, r g =1 ? , r l =2.2 ? 12 ns drain-source body diode characteristics forward diode voltage v sd v gs =0v,i s =4a 0.75 1.2 v notes : a. pulse test : pulse width 300s, duty cycle 2%. b. these parameters have no way to verify. 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
012345 0 4 8 12 16 0.40.60.81.01.21.41.61.8 0 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1e-3 0.01 0.1 1 10 02468 20 40 60 80 100 0246810121416 10 20 30 40 50 60 CJ2312 ta=25 o c v gs =2 thru 4.5 v gs =1.5v v gs =1v drain current i d (a) drain to source voltage v ds (v) output characteristics drain current i d (a) gate to source voltage v gs (v) ta=25 o c transfer characteristics 20 ta=25 o c source current i s (a) source to drain voltage v sd (v) v sd i s ?? v gs r ds(on) ?? ta=25 o c on-resistance r ds(on) (m ? ) gate to source voltage v gs (v) i d =3.0a v gs =1.8v v gs =2.5v v gs =4.5v i d r ds(on) ?? on-resistance r ds(on) (m ? ) drain current i d (a) ta=25 o c 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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